| 摘要 |
An MOCVD process is provided for forming metal-containing films having the general formula M'xM"(1-x)MyOz, wherein M' is a metal selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Y, Sc, Yb, Lu, and Gd; M" is a metal selected from the group consisting of Mg, Ca, Sr, Ba, Pb, Zn, and Cd; M is a metal selected from the group consisting of Mn, Ce, V, Fe, Co, Nb, Ta, Cr, Mo, W, Zr, Hf and Ni; x has a value from 0 to 1; y has a value of 0, 1 or 2; and z has an integer value of 1 through 7. The MOCVD process uses precursors selected from alkoxide precursors, beta -diketonate precursors, and metal carbonyl precursors in combination to produce metal-containing films, including resistive memory materials. |
