METHOD FOR FORMING GATE PROFILE IN FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate profile in fabricating a semiconductor device is provided to improve reduced repeatability and reliability caused by ununiformity of a notch by forming a gate profile in a way that a notch is not generated when a gate CD(critical dimension) is decreased. CONSTITUTION: A gate oxide is deposited. Polysilicon for forming a gate is deposited on the gate oxide. By using an end pointer, the polysilicon is etched until the gate oxide is exposed. Residual polysilicon is eliminated to form a gate profile.