发明名称 Double layer patterning and technique for milling patterns
摘要 Double photolithography is used to produce an under-layer (130) of protective and filtering photoresist over a substrate that will have channels milled with a FIB. Secondary layers (132-140) are applied with precision on top of the first layer in order to define the precise patterns (134,140) to be milled and to provide targeting and alignment fiducials (132,136,138). <IMAGE>
申请公布号 EP1445654(A2) 申请公布日期 2004.08.11
申请号 EP20030257147 申请日期 2003.11.12
申请人 ADVANCED RESEARCH CORPORATION 发明人 DUGAS, MATTHEW P.;TERSTEEG, JOSEPH
分类号 G03F9/00;G03F7/00;G03F7/09;G11B5/127;G11B5/187;G11B5/23;G11B5/29;G11B5/31;G11B5/58;G11B5/584;H01L21/027;(IPC1-7):G03F7/09;H01J37/304;H01J37/305 主分类号 G03F9/00
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