发明名称 |
Double layer patterning and technique for milling patterns |
摘要 |
Double photolithography is used to produce an under-layer (130) of protective and filtering photoresist over a substrate that will have channels milled with a FIB. Secondary layers (132-140) are applied with precision on top of the first layer in order to define the precise patterns (134,140) to be milled and to provide targeting and alignment fiducials (132,136,138). <IMAGE> |
申请公布号 |
EP1445654(A2) |
申请公布日期 |
2004.08.11 |
申请号 |
EP20030257147 |
申请日期 |
2003.11.12 |
申请人 |
ADVANCED RESEARCH CORPORATION |
发明人 |
DUGAS, MATTHEW P.;TERSTEEG, JOSEPH |
分类号 |
G03F9/00;G03F7/00;G03F7/09;G11B5/127;G11B5/187;G11B5/23;G11B5/29;G11B5/31;G11B5/58;G11B5/584;H01L21/027;(IPC1-7):G03F7/09;H01J37/304;H01J37/305 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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