发明名称 |
FLAT CAPACITOR FOR INTEGRATED CIRCUIT AND FABRICATING METHOD THEREOF |
摘要 |
PURPOSE: A flat capacitor for an integrated circuit is provided to improve an electrical characteristic of a capacitor by preventing a dielectric layer of the capacitor from being deteriorated. CONSTITUTION: A lower interconnection is formed in a predetermined portion of a semiconductor substrate(100). A lower electrode(125b) is formed on the lower interconnection, electrically connected to the lower interconnection. A dielectric layer(136) is formed on the lower electrode, having a concave type with both corners. An upper electrode(141) of a concave type is formed on the dielectric layer. The first upper interconnection is electrically connected to the lower interconnection. The second upper interconnection is connected to the upper electrode. The upper electrode of the concave type is larger than the lower electrode. |
申请公布号 |
KR20040070925(A) |
申请公布日期 |
2004.08.11 |
申请号 |
KR20030007160 |
申请日期 |
2003.02.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
WON, SEOK JUN |
分类号 |
H01L21/768;H01L21/02;H01L21/316;H01L21/318;H01L21/822;H01L23/522;H01L27/04;H01L27/108;(IPC1-7):H01L27/04 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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