发明名称 |
Epitaxial growth of nitride semiconductor device |
摘要 |
The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lattice differences between the substrate and the AlGaInN compound semiconductor is significantly reduced and the growth of the AlGaInN compound semiconductor is improved.
|
申请公布号 |
US6774410(B2) |
申请公布日期 |
2004.08.10 |
申请号 |
US20020292712 |
申请日期 |
2002.11.13 |
申请人 |
UNITED EPITAXY COMPANY |
发明人 |
CHANG CHIH-SUNG;TSAI TZONG-LIANG |
分类号 |
C30B29/38;C30B25/02;H01L21/20;H01L21/205;H01L29/06;H01L31/0328;H01L33/00;H01L33/12;H01L33/16;H01S5/323;H01S5/343;(IPC1-7):H01L29/06 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|