| 发明名称 |
Metal-insulator-metal capacitor and a method for producing same |
| 摘要 |
A capacitor stack in a layer structure of an integrated component has the same layer sequence as an adjacent interconnect, with the exception of a dielectric interlayer. This significantly facilitates the fabrication of vias.
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| 申请公布号 |
US6774425(B2) |
申请公布日期 |
2004.08.10 |
| 申请号 |
US20020221010 |
申请日期 |
2002.10.15 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
LACHNER RUDOLF;SCHRENK MICHAEL;SCHWERD MARKUS |
| 分类号 |
H01G4/33;H01L21/02;H01L23/522;H01L29/92;(IPC1-7):H01L27/108;H01L29/76 |
主分类号 |
H01G4/33 |
| 代理机构 |
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代理人 |
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| 主权项 |
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