发明名称 |
Pn-juction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode |
摘要 |
A pn-junction type compound semiconductor light-emitting device having a substrate formed of a crystal, a first barrier layer provided on the substrate and formed of an undoped boron phosphide-base semiconductor of first conduction type, and a light-emitting layer of a first or a second conduction type provided on the first barrier layer including a plurality of superposed constituent layers formed of group III nitride semiconductors each having a different band gap. The constituent layer of the light-emitting layer provided closest to the first barrier layer is a first light-emitting constituent layer formed of a group III nitride semiconductor containing phosphorus (P). A method for producing the semiconductor light-emitting device is also disclosed.
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申请公布号 |
US6774402(B2) |
申请公布日期 |
2004.08.10 |
申请号 |
US20030384666 |
申请日期 |
2003.03.11 |
申请人 |
SHOWA DENKO KABUSHIKI KAISHA |
发明人 |
UDAGAWA TAKASHI |
分类号 |
H01L33/08;H01L33/32;(IPC1-7):H01L29/22 |
主分类号 |
H01L33/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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