发明名称 Structure and method for low-stress concentration solder bumps
摘要 Low stress concentration solder bumps are created on a semiconductor wafer by the removal of metal oxides of under bump metallurgy, (UBM). The removal of the oxides from the circular edge of the UBM allow the solder of the solder bump to wet the sides of the UBM, mainly the plated portion, thereby resulting in a solder bump structure with a filled undercut. This results in a lower stress concentration solder bump structure. This solder bump structure is obtained after the solder bumps have been reflowed on the wafer.
申请公布号 US6774026(B1) 申请公布日期 2004.08.10
申请号 US20020177912 申请日期 2002.06.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WANG CHUNG YU;HUANG CHENDER;TSAO PEI HAW;CHEN KEN;HUANG HANK
分类号 H01L21/60;(IPC1-7):H01L21/44 主分类号 H01L21/60
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