发明名称 |
Magnetoresistance effect device with a Ta, Hf, or Zr sublayer contacting an NiFe layer in a magneto resistive structure |
摘要 |
A magnetoresistance effect device has the basic structure of substrate/sublayer/NiFe layer/CoFe layer/non-magnetic layer/fixed magnetic layer/antiferromagnetic layer. The sublayer may be Ta at a film thickness of not less than 0.2 nm but less than 3.0 nm, or Hf at a film thickness of not less than 0.2 nm but not greater than 1.5 nm, or Zr at a film thickness of not less than 0.2 nm but not greater than 2.5 nm. It is permissible to use only an NiFe layer instead of the NiFe layer/CoFe layer.
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申请公布号 |
US6775110(B1) |
申请公布日期 |
2004.08.10 |
申请号 |
US19980076111 |
申请日期 |
1998.05.12 |
申请人 |
TDK CORPORATION |
发明人 |
HAYASHI KAZUHIKO;MORI SHIGERU;NAKADA MASAFUMI |
分类号 |
G01R33/09;G11B5/00;G11B5/012;G11B5/02;G11B5/39;H01F1/057;H01F10/08;H01F10/14;H01F10/30;H01F10/32;H01L43/08;(IPC1-7):G11B5/39 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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