发明名称 Semiconductor devices and methods
摘要 A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a layer of quantum dots disposed between adjacent layers of the device; and providing an auxiliary layer disposed in one of the adjacent layers, and spaced from the layer of quantum dots, the auxiliary layer being operative to communicate carriers with the layer of quantum dots.
申请公布号 US6773949(B2) 申请公布日期 2004.08.10
申请号 US20020330692 申请日期 2002.12.27
申请人 THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS;THE BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM 发明人 HOLONYAK, JR. NICK;DUPUIS RUSSELL
分类号 H01L29/12;H01L33/06;H01S5/34;(IPC1-7):H01L21/20 主分类号 H01L29/12
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