发明名称 Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof
摘要 A memory integrated circuit includes a nonvolatile memory array that is programmed in page mode. A volatile utility memory is connected to the memory array, and is at least a page in size so that an entire page of data that is either being programmed into or read from the memory array may be stored in the utility memory, thereby providing a single readily accessible and fully functional volatile memory that supports a variety of data operations such as nonvolatile memory programming, program-verify when supplemented with a program verify detector, data compare when supplemented with a comparator, and other operations including, in particular, operations that can benefit from the availability of a fast volatile memory to store an entire page of program data or read data. The outputs of the program verify detector, the comparator, and potentially the other operations circuits are furnished to a memory control circuit for controlling the memory or setting particular register values, or may be furnished as output through an I/O circuit that implements data input/output functions and performs various data routing and buffering functions for the integrated circuit memory.
申请公布号 US6775184(B1) 申请公布日期 2004.08.10
申请号 US20030349384 申请日期 2003.01.21
申请人 NEXFLASH TECHNOLOGIES, INC. 发明人 PARK JOO WEON;LEE POONGYEUB
分类号 G11C11/34;G11C14/00;G11C16/10;G11C16/34;(IPC1-7):G11C14/00 主分类号 G11C11/34
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