发明名称 |
Configuration of fuses in semiconductor structures with Cu metallization |
摘要 |
A configuration of fuses in a semiconductor structure having Cu metallization planes is provided. The semiconductor structure has an Al metal layer on the topmost interconnect plane for providing Al bonding pads. The fuses are configured as Al fuses and, in the semiconductor structure having Cu metallization planes, are provided above the diffusion barrier of the topmost Cu metallization plane but below a passivation layer.
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申请公布号 |
US6774456(B2) |
申请公布日期 |
2004.08.10 |
申请号 |
US20010013256 |
申请日期 |
2001.12.10 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
RUSCH ANDREAS;MOECKEL JENS |
分类号 |
H01L23/525;H01L23/532;(IPC1-7):H01L21/425 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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