发明名称 Method of reducing thick film stress of spin-on dielectric and the resulting sandwich dielectric structure
摘要 The present invention provides a technique to reduce a stress of thick spin-on dielectric layer by forming a sandwich dielectric structure, wherein a first dielectric layer is formed on a substrate by spin coating, a liquid phase deposited (LPD) silica layer is formed the first dielectric layer, and a second dielectric layer is formed on the LPD silica layer by spin coating. The LPD silica layer can be further subjected to a nitrogen plasma treatment to enhance its thermal stability and anti-water penetration ability.
申请公布号 US6774461(B2) 申请公布日期 2004.08.10
申请号 US20020075293 申请日期 2002.02.15
申请人 NATIONAL SCIENCE COUNCIL 发明人 YEH CHING-FA;LEE YUEH-CHUAN;HSU CHIH-CHUAN;WU KWO-HAU;WANG SHUO-CHENG
分类号 H01L21/312;H01L21/316;(IPC1-7):H01L23/58 主分类号 H01L21/312
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