Semiconductor device with an silicon on insulator (soi) substrate

摘要

A semiconductor and a method of manufacturing thereof form a region with a sufficient gettering effect. A p-type channel MOSFET and an n-type channel MOSFET are formed in an n-type semiconductor layer, which is isolated in a form of islands on an SOI substrate. A high-concentration impurity diffused region is formed in such a manner as to surround the p-type channel MOSFET and the n-type channel MOSFET. The high-concentration impurity diffused region has a surface concentration of between 1x10<18 >atom/cm<3 >and 5x10<20 >atom/cm<3 >for achieving a desired gettering effect.