发明名称 |
High crack resistance nitride process |
摘要 |
A new method of creating a relatively thick layer of PE silicon nitride. A conventional method of creating a layer of silicon nitride applies a one-step process for the creation thereof. Film stress increases as the thickness of the created layer of PE silicon nitride increases. A new method is provided for the creation of a crack-resistant layer of PE silicon nitride by providing a multi-step process. The main processing step comprises the creation of a relatively thick, compressive film of PE silicon nitride, over the surface of this relatively thick layer of PE silicon nitride is created a relatively thin (between about 150 and 500 Angstrom) layer of tensile stress PE silicon nitride. This process can be repeated to create a layer of PE silicon nitride of increasing thickness. A layer of PE silicon nitride can in this manner be created to a thickness of about 4 mum, whereby this thick layer of PE silicon nitride is free of stress and therefor free of therefrom following cracking of the layer of PE silicon nitride.
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申请公布号 |
US6774059(B1) |
申请公布日期 |
2004.08.10 |
申请号 |
US20030417320 |
申请日期 |
2003.04.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHUANG POYO;NI CHYI-TSONG |
分类号 |
H01L21/318;H01L21/768;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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