发明名称 |
Method and apparatus for determining critical dimension variation in a line structure |
摘要 |
A method for determining critical dimension variation includes providing a wafer having a grating structure comprising a plurality of lines; illuminating at least a portion of the lines with a light source; measuring light reflected from the illuminated portion of the lines to generate a reflection profile; and determining a critical dimension variation measurement of the lines based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure comprising a plurality of lines includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the lines. The detector is adapted to measure light reflected from the illuminated portion of the lines to generate a reflection profile. The data processing unit is adapted to determine a critical dimension variation measurement of the lines based on the reflection profile.
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申请公布号 |
US6773939(B1) |
申请公布日期 |
2004.08.10 |
申请号 |
US20010897624 |
申请日期 |
2001.07.02 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WRIGHT MARILYN I. |
分类号 |
B24B37/04;B24B49/12;G01N21/956;(IPC1-7):H01L21/66 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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