| 摘要 |
A leak monitoring transistor is selected from transistors of a semiconductor integrated circuit manufactured in the manufacturing process set to the same condition, and a reference voltage is produced in a reference voltage producing unit according to leak current of the leak monitoring transistor in a standby time period. The reference voltage is lowered as a value of the leak current is increased. An output voltage set to be equal to the reference voltage in an operational amplifier is applied to the other transistors of the semiconductor integrated circuit. The characteristic of the leak currents of the other transistors is the same as that of the leak monitoring transistor. Therefore, when the transistors having the leak currents higher than a designed value are manufactured, the output voltage is lowered due to the leak monitoring transistor having the leak current higher than the designed value.
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