| 摘要 |
A new capacitor architecture includes a front plate of the capacitor formed form a first polysilicon layer. The front plate is surround by first and second dielectric layers. The back plate of the capacitor is formed from one layer of a first two-layer conductive structure which surrounds the first and second dielectric layer. The two layer structure is an equal potential structure and includes a conductive coupling between the two layers. In one embodiment, the back plate of the capacitor is formed from a metal layer. A third and fourth dielectric layers surround the first two-layer conductive structure. A second two-layer equal potential conductive structure surrounds the third and fourth dielectric layers. In one embodiment, the second two-layer equal potential conductive structure comprise an interconnect between a metal layer and the substrate.
|
