| 摘要 |
An ALD thin film deposition equipment and cleaning method wherein the reactor comprises: a reactor block (110) on which a wafer can be mounted; a shower head plate (120) for maintaining a predetermined pressure constant by covering the reactor block; a diffusion plate (130) installed on a lower surface of the shower head plate (120), the diffusion plate (130) having a plurality of spray holes (131) formed over the wafer (w) to spray the first reaction gas and/or inert gas and/or cleaning gas transferred via the first reaction gas supply line onto the upper surface of the wafer block (140), and a plurality of nozzles (133) slanted toward the inner sidewall of the reactor block to spray the second reaction gas and/or inert gas and/or cleaning gas transferred via the second reaction gas supply line; and a wafer block (140) installed within the reactor block (110), on which the wafer can be seated, and, preferably, wherein the ALD thin film deposition equipment further comprises a coolant passage in the shower head plate in order to decrease the temperature of the diffusion plate (120) to a desired temperature range. <IMAGE>
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