| 摘要 |
The present invention relates to a method for fabricating a capacitor of a semiconductor memory device using an electrochemical deposition. The method in accordance with the present invention includes the steps of forming a contact hole in an insulating layer formed on a substrate; forming a plug in the contact hole, wherein the plug contains a nitride layer; forming a seed layer on the insulating layer and in the contact hole; forming a sacrificial layer including a trench overlapped with the contact hole; forming a Ru bottom electrode in the trench with electrochemical deposition; removing the sacrificial layer and exposing the Ru bottom electrode, wherein the seed layer not covered with the Ru bottom electrode is exposed; removing the exposed seed layer; forming a dielectric layer on the Ru bottom electrode; and forming a top electrode on the dielectric layer.
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