| 摘要 |
PURPOSE: A method for forming a quantum dot of a silicon nano-crystal is provided to form the sufficient amount of the quantum dot of high density on an insulating layer of a silicon substrate by forming more density than minimum dot density of 1x10¬12/cm¬2. CONSTITUTION: An insulating layer(3) is formed on the surface of a substrate(1). A lattice constant of the insulating layer is different from the lattice constant of the substrate. A quantum dot(5) of silicon nano-crystal is formed on a potential lattice dot(4), which is generated by a lattice constant difference between the insulating layer and the substrate. The insulating layer is formed with one selected from SrTiO3, BaTiO3, BaO, SrO, CaO, SrZrO3, BaZrO3. A Ba0.75Sr0.25O layer as a buffer layer(2) is formed between the substrate and the insulating layer.
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