| 发明名称 |
METHOD FOR DEPOSITING III-V SEMICONDUCTOR LAYERS ON A NON-III-V SUBSTRATE |
| 摘要 |
Between two III-V layers a thin intermediate layer is deposited at a reduced temperature of growth. An independent claim is included for the corresponding method.
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| 申请公布号 |
KR20040070239(A) |
申请公布日期 |
2004.08.06 |
| 申请号 |
KR20047009466 |
申请日期 |
2002.11.16 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/20;C30B23/02;C30B25/02;C30B25/18;H01L21/205 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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