METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent voids and to minimize leakage current by performing SOG(Spin On Glass) coating in a trench using HSQ(Hydrogen SilsesQuioxane) solutions. CONSTITUTION: A trench(T) is formed in a silicon substrate(11) by using a pad oxide pattern(12) and a nitride layer(13) as an etching mask. A thermal oxide layer(15) is formed on the resultant structure including the trench. By performing SOG coating, the trench is partially filled with a gap-fill dielectric(16). By using a CVD(Chemical Vapor Deposition), the trench is completely filled with a gap-fill oxide layer(17). The gap-fill dielectric is an HSQ layer having a dielectric constant of 2.5 to 2.9.