发明名称 |
METHOD OF MANUFACTURING FIELD PROGRAMMABLE GATE ARRAY |
摘要 |
PURPOSE: A method of manufacturing an FPGA(Field Programmable Gate Array) is provided to improve the reliability by forming a program-off line region in a via forming process. CONSTITUTION: A first IMD(Inter Metal Dielectric)(18) for filling a gap between first metal lines(17) is deposited on a PMD(Pre-Metal Dielectric)(15) and planarized by using CMP(Chemical Mechanical Polishing). A plurality of via parts(20) for contacting the first metal lines are formed in the first IMD. At this time, a program-off line region(A) is defined. Second metal lines(21) for contacting the via parts are formed on the first IMD. A second IMD(22) for filling a gap between the second metal lines is deposited on the first IMD and planarized by using CMP.
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申请公布号 |
KR20040069802(A) |
申请公布日期 |
2004.08.06 |
申请号 |
KR20030006344 |
申请日期 |
2003.01.30 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
OH, SANG HUN |
分类号 |
H01L21/3205;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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