发明名称 METHOD OF MANUFACTURING FIELD PROGRAMMABLE GATE ARRAY
摘要 PURPOSE: A method of manufacturing an FPGA(Field Programmable Gate Array) is provided to improve the reliability by forming a program-off line region in a via forming process. CONSTITUTION: A first IMD(Inter Metal Dielectric)(18) for filling a gap between first metal lines(17) is deposited on a PMD(Pre-Metal Dielectric)(15) and planarized by using CMP(Chemical Mechanical Polishing). A plurality of via parts(20) for contacting the first metal lines are formed in the first IMD. At this time, a program-off line region(A) is defined. Second metal lines(21) for contacting the via parts are formed on the first IMD. A second IMD(22) for filling a gap between the second metal lines is deposited on the first IMD and planarized by using CMP.
申请公布号 KR20040069802(A) 申请公布日期 2004.08.06
申请号 KR20030006344 申请日期 2003.01.30
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 OH, SANG HUN
分类号 H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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