THIN FILM CAPACITOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A thin film capacitor and a method of manufacturing the same are provided to improve the capacitance and to reduce the size by using a protrusion with a spacer. CONSTITUTION: A lower insulating layer(12) and a thin film capacitor are sequentially formed on a semiconductor substrate structure(11). The capacitor includes a first electrode layer(16), a dielectric film(17) on the first electrode layer and a second electrode layer(18) on the dielectric film. A plurality of protrusions(13') with spacers(15') are formed on the lower insulating layer, thereby forming a plurality of protrusions on the capacitor. The protrusion is made of one selected from the group consisting of metal, nitride and oxide. The spacer of the protrusion is made of nitride.