发明名称 |
MASK FOR FABRICATING SEMICONDUCTOR |
摘要 |
PURPOSE: A mask for fabricating a semiconductor is provided to reduce errors in a CD(Critical Dimension) measurement process by preventing storage of electrons around patterns. CONSTITUTION: A wafer(11) is formed with quartz or glass. A frame region(13) is formed by depositing chrome on an upper surface of the wafer. The frame region is connected to a ground part. A boundary region(15) is formed with the exposed surface of the wafer in the inside of the frame region. A pattern region(17) is formed in the inside of the boundary region. The boundary region is used for isolating the pattern region from the frame region. An auxiliary pattern is used for connecting the frame region to the pattern region.
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申请公布号 |
KR20040069811(A) |
申请公布日期 |
2004.08.06 |
申请号 |
KR20030006353 |
申请日期 |
2003.01.30 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
LEE, IL HO |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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