TRANSISTOR HAVING HIGH OPERATION VOLTAGE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A transistor having a high operation voltage and a manufacturing method thereof are provided to obtain easily a high voltage device without the growth of a thick gate oxide layer and an additional ion-implantation and to reduce the size of the high voltage device by using a nitride layer. CONSTITUTION: A field region(20) is formed in a substrate by using a trench process. A nitride layer is formed on the entire surface of the resultant structure. The nitride layer is selectively left on a gate forming region to control an operation voltage. A gate oxide layer and a gate electrode are sequentially formed on the substrate. At this time, the remaining nitride layer is enclosed with the gate electrode. By using an ion-implantation, a source/drain are formed in the substrate to align the gate electrode.