RECESS CHANNEL MOSFET AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A recess channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor) and a manufacturing method thereof are provided to simplify process and to improve the degree of integration without punch-through by burying completely a gate in a semiconductor substrate and planarizing the semiconductor substrate. CONSTITUTION: A plurality of trenches(130) are formed in a semiconductor substrate(100). A gate insulating layer(135) is formed at the sidewall and bottom of each trench. A gate(150) is formed on the gate insulating layer to fill partially the trench. The gate is composed of the first conductive layer(140) and the second conductive layer(145), wherein the second conductive layer is enclosed by the first conductive layer. The trench is filled with a capping layer(160a). Source and drain(170) are formed at both sides of the gate.