| 摘要 |
A lateral thin-film silicon-on-insulator (SOI) device includes a lateral semiconductor device such as a diode or MOSFET provided in a thin semiconductor film on a thin buried oxide. The lateral semiconductor device structure includes at least two semiconductor regions separated by a lateral drift region. By providing a substantially linear lateral doping profile in the lateral drift region, and by providing a conductive field plate on a linearly-graded top oxide insulating layer, a device structure is obtained in which conduction losses can be reduced without reducing breakdown voltage.
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