发明名称 ULTRA MICRO MAGNETIC FIELD DETECTION SENSOR BY USING MAGNETO IMPEDANCE EFFECT AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: An ultra micro magnetic field detection sensor by using a magneto impedance effect and a method for manufacturing the same are provided to obtain an excellent sensibility with an amplification rate smaller than that of the sensor utilizing the direct current magnetic resistance effect. CONSTITUTION: An ultra micro magnetic field detection sensor by using a magneto impedance effect includes an X-axis magnetic field detection sensor(100) and a Y-axis magnetic field detection sensor(200). Each of the X-axis magnetic field detection sensor(100) and the Y-axis magnetic field detection sensor(200) is provided with a first substrate(11), a second substrate(15), a linear magnetic material(10), a DC bias field coil, a first and a second input electrode terminals and a first and a second output electrode terminals. The first substrate(11) is made of an insulator. The second substrate(15) is made of an insulator and is stacked on the first substrate(11). The linear magnetic material(10) is formed on the first substrate(11) in the form of line. The DC bias field coil is capable of shifting the zero point of the external magnetic field at the magnetic impedance characteristics of the linear magnetic field. The first and second input electrode terminals apply the alternative current to the both ends of the linear magnetic material(10). And, the first and second output electrode terminals detect the detection signal proportional to the magnetic impedance of the linear magnetic material(10).
申请公布号 KR20040069563(A) 申请公布日期 2004.08.06
申请号 KR20030005999 申请日期 2003.01.29
申请人 YUYU CO., LTD. 发明人 JANG, GIL JAE;KIM, CHEOL GI;SONG, YONG SEOL
分类号 G01R29/00;(IPC1-7):G01R29/00 主分类号 G01R29/00
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