METHOD OF MANUFACTURING SEMICONDUCTOR INCLUDING FLUORINE-IMPLANTATION

摘要

PURPOSE: A method of manufacturing semiconductor is provided to improve GOI(Gate Oxide Integrity) and QBD properties and to reduce leakage current by forming Si-F bonds on a silicon wafer using a fluorine-implantation. CONSTITUTION: A trench is formed in a silicon wafer by performing etching using a pad oxide layer and a nitride layer as an etching mask. An oxide layer for filling completely the trench is formed on the resultant structure. The oxide layer is planarized by using CMP(Chemical Mechanical Polishing). The nitride layer and the pad oxide layer are removed therefrom. A fluorine-implantation is performed on the entire surface of the wafer.