METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent micro-bridge by restraining the exposure of a void of a trench oxide layer. CONSTITUTION: A trench(14) is formed in a silicon substrate(11) by using a pad oxide pattern and a nitride pattern as an etching mask. A thermal oxide layer(15) is formed at sides and bottom of the trench by using a thermal oxidation. The trench is filled with a gap-fill oxide layer(16) with a void(17) by using a CVD(Chemical Vapor Deposition) and CMP(Chemical Mechanical polishing). At this time, gap-fill oxide is supplied to the trench at the rate of 1400 to 1670 I/min in order to form compactly the gap-fill oxide layer, thereby preventing the exposure of the void due to the CMP.