发明名称 |
ION SOURCE OF ION INJECTION APPARATUS |
摘要 |
PURPOSE: An ion source of an ion injection apparatus is provided to protect an end cap of an arc chamber in case of creating a beam and to create efficiently a plasma in the arc chamber. CONSTITUTION: An ion source(110) of an ion injection apparatus comprises an arc chamber(112) into which a gas is injected for an ion injection process, a filament(114) for emitting a thermion to ionize the gas inside the arc chamber, and a reflector(116) for repelling the thermion in opposition to the filament and located at a center of the arc chamber and rocking to achieve efficiently a creation of a plasma in the arc chamber. The reflector is a square type and has a round corner.
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申请公布号 |
KR20040069447(A) |
申请公布日期 |
2004.08.06 |
申请号 |
KR20030005842 |
申请日期 |
2003.01.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, SANG GUK |
分类号 |
H01J37/36;(IPC1-7):H01J37/36 |
主分类号 |
H01J37/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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