| 摘要 |
Affords ceramic susceptors, for semiconductor manufacturing equipment, in which wafer-surface isothermal quality during heating operations is heightened by enhancing the degree of planarization of the susceptor wafer-carrying face in its high-temperature region where wafers are processed in the course of manufacturing semiconductors. Ceramic susceptor ( 1 ) for semiconductor manufacturing equipment has in the surface or interior of ceramic substrates ( 2 a) and ( 2 b) resistive heating element ( 3 ), and a non-heating (ordinary-temperature) arched contour in its wafer-carrying face is a concavity of 0.001 to 0.7 mm per 300 mm. A plasma electrode furthermore may be disposed in ceramic susceptor 1 , in the surface or interior of ceramic substrates ( 2 a) and ( 2 b). Preferably, moreover, ceramic substrates ( 2 a) and ( 2 b) are at least one ceramic selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
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