SEMICONDUCTOR TO KEEP PLANARIZATION UNIFORM AFTER CMP PROCESS AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor to keep planarization uniform after a CMP process and a fabricating method thereof are provided to maintain the planarization by performing an etch-back process using a selection ratio between a photoresist layer and an insulating layer. CONSTITUTION: A conducting line is formed on an upper surface of a silicon substrate. The first insulating layer is formed on an upper surface of the conducting line. The second insulating layer is formed on an upper surface of the first insulating layer. A planarization process using a CMP process is performed. A photoresist layer is formed thereon. The second insulating layer is etched by using the photoresist layer as a mask.