发明名称 FIELD EMISSION DEVICE AND FABRICATION METHOD
摘要 PURPOSE: A field emission device and a fabrication method are provided to prevent a destruction of an anode oxidation film due to stress in a longitudinal direction of a bottom electrode by forming an insulating oxidation film at an intersection part of a bottom electrode and a top electrode. CONSTITUTION: A field emission device comprises a plurality of bottom electrode buses made of conductive material at a top glass and which is formed with a unit bus type at a plurality of device formation position, a plurality of top electrode buses located at a top part of the of bottom electrode buses and crossed with the bottom electrode buses at the device formation positions and having an aperture part at a center part of a crossing point, an anode oxidation film formed among the bottom and the top electrode buses and located at a part excepting a territory connected between the aperture part of the top electrode buses and the top electrode buses, and a tunnel oxidation film located at a bottom part of the aperture part and at a top part of the bottom electrode bus.
申请公布号 KR20040069536(A) 申请公布日期 2004.08.06
申请号 KR20030005961 申请日期 2003.01.29
申请人 LG ELECTRONICS INC. 发明人 LEE, YONG HAN
分类号 H01J1/30;(IPC1-7):H01J1/30 主分类号 H01J1/30
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