发明名称 ONE-CHIP DIRECT CONVERSION TRANSCEIVER FOR REDUCING DC OFFSET AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A one-chip direct conversion transceiver for reducing a DC offset and its manufacturing method are provided to reduce power consumption by effectively preventing signal leakage with a positive hole. CONSTITUTION: A positive hole(130a) is formed by penetrating the center of a substrate(100). The positive hole(130a) is filled with a conductive plug(130). A mixer part(110) and a local oscillator(120) are provided at one and the other side of the subscriber(100) centering on the positive hole(130a), respectively. The first dielectric layer(140), a shield ground surface(150) and the second dielectric layer(142) are sequentially stacked on the subscriber(100). The first via hole(h1) is formed by penetrating the first and second dielectric layers(140,142) to expose the mixer part(110). The second via hole(h2) is formed to expose the local oscillator(120). The first and second via holes(h1,h2) are filled with the first and second conductive plugs(C1,C2). The first line(160) is formed on the second dielectric layer(142) to connect the first and second conductive plugs(C1,C2). The mixer part(110) and the local oscillator(120) are connected by the first conductive plug(C1), the first line(160) and the second conductive plug(C2). The third, fourth and fifth dielectric layers(144,146,148) are sequentially stacked on the second dielectric layer(142) to cover the first line(160).
申请公布号 KR20040069507(A) 申请公布日期 2004.08.06
申请号 KR20030005929 申请日期 2003.01.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JONG AE;WOO, SANG HYEON
分类号 H01L21/768;H01L21/822;H01L23/522;H01L27/04;H04B1/08;H04B1/30;H04L27/38;(IPC1-7):H04B1/40 主分类号 H01L21/768
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