HIGH DENSITY-FLAT PANEL LAMP OF WHITE LEDS

摘要

PURPOSE: A high density-flat panel lamp of white LEDs is provided to form a high-brightness white lamp having a high-integrated chip by using a metal line for connecting chips on a semiconductor wafer. CONSTITUTION: An n-type GaN cladding layer is grown on a buffer layer by performing an MOCVD method using a sapphire substrate. An undoped GaN layer is grown on the cladding layer. A blue emitting active layer is grown on the cladding layer. A P-type GaN cladding layer is grown on the blue emitting active layer. An N-type GaN ohmic contact layer is exposed by performing a dry-etch process. A transparent electrode is formed on the P-type GaN cladding layer. A metal line(8) of an N-type electrode is formed on the N-type GaN ohmic contact layer. A SiO2 insulating layer(18) is formed on the N-type GaN ohmic contact layer. A P-type electrode and a metal line(9) are formed on the insulating layer. The P-type electrode is coated by the SiO2 insulating layer. The P-type electrode and the N-type electrode are drawn.