CHEMICAL SOLUTION FOR REMOVING BPSG OR PSG LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A chemical solution for removing a BPSG (boron-phosphor-silicate glass) or PSG (phosphor-silicate glass) layer of a semiconductor device is provided, to allow a protection film to be formed on the side wall of constitution material of a transistor without generating residue during dipping species, thereby preventing the loss or displacement of the constitution material. CONSTITUTION: The chemical solution comprises HF and ethylene glycol in the ratio of 1:25 by mol. Preferably the chemical solution comprises HF, ethylene glycol and acetic acid in the ratio of 1 : 25 : 0.1-1 by mol.