METHOD FOR IMPROVING TOPOLOGY OF DUAL DAMASCENE PROCESS AND METHOD FOR REMOVING RESIDUES

摘要

PURPOSE: A method for improving a topology of a dual damascene process and a method for removing residues are provided to remove the topology and the residues by performing a dipping process after a CMP process. CONSTITUTION: A first insulating layer(42), an etch-stop layer(43), and a second insulating layer(44) are formed on a semiconductor substrate(41). A trench region is formed by coating and patterning a first photoresist on the second insulating layer. A contact region is defined and a contact hole is formed by coating and patterning a second photoresist on the entire surface of the semiconductor substrate. A metal line having a dual damascene structure is formed within the contact hole by forming and planarizing a metal layer on the entire surface of the semiconductor substrate. A topology between the metal layer and the second insulating layer is offset by dipping the wafer into a hydrofluoric acid solution. The residues such as silicon and oxide are removed therefrom.