METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING SECOND SIDEWALL PROCESS

摘要

PURPOSE: A method for fabricating a semiconductor device using a second sidewall process is provided to reduce a depletion area and improve a breakdown voltage by forming the semiconductor device with a junction structure having the second sidewall formed on one side of the first sidewall. CONSTITUTION: A gate electrode(131), an LDD(Lightly Doped Drain) region, and a first sidewall(160) are formed on an upper surface of a semiconductor substrate(100). A depletion area reduction ion process is performed on a surface of the semiconductor substrate including the first sidewall. A second sidewall is formed on both sides of the first sidewall. Source and drain regions(180) are formed by implanting heavily doped ions into the entire surface of the semiconductor substrate.