| 摘要 |
PURPOSE: A method for forming a gate insulating layer of a semiconductor device is provided to increase drain current by enhancing capacitance using N-O structure. CONSTITUTION: A substrate(100) is defined to active regions(110) and isolation regions. An NH4OH nitride layer(110a) is formed on the active regions by nitridation using annealing. A gate insulating layer(160) is formed on the resultant structure. An NH4OH nitride layer(160a) is formed on the gate insulating layer by nitridation using annealing. A gate electrode(180) is then formed on the resultant structure.
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