发明名称 METHOD FOR FABRICATING ANODE OF ORGANIC SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREBY
摘要 PURPOSE: A method for fabricating an anode of an organic semiconductor device and a semiconductor device thereby are provided to improve an electrical characteristic by lowering a hole injection barrier. CONSTITUTION: A method for fabricating an anode of an organic semiconductor device includes a process for forming a first TCO(Transparent Conducting Oxide) layer and a process for forming a second TCO layer. The process for forming the first TCO layer is performed to form the first TCO layer by controlling the optimum amount of oxygen(S1). The process for forming the second TCO layer is performed to form the second TCO layer by controlling the excessive amount of oxygen(S2).
申请公布号 KR20040069469(A) 申请公布日期 2004.08.06
申请号 KR20030005876 申请日期 2003.01.29
申请人 CHOI, MYUNG WOON;JEONG, KWANG HO 发明人 CHO, GWANG HUI;CHOI, MYUNG WOON;JEONG, KWANG HO;SUNG, CHANG JE;YANG, JAE GYEONG
分类号 H05B33/10;(IPC1-7):H05B33/10 主分类号 H05B33/10
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