MANUFACTURING METHOD FOR SEMICONDUCTOR ELEMENT HAVING MULTIPLE GATE INSULATING FILM, AND SEMICONDUCTOR ELEMENT MANUFACTURED THEREBY

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element in which a depth of a recessed region (dent region), formed in an edged region of a first element isolation film, when a pad insulating film is removed for forming a low-voltage gate insulation film on a first active region adjacent to the first element isolation film, is minimized, and a dent region is prevented completely from being formed in an edge region of a second element isolation film. SOLUTION: The pad insulation film and an initial high-voltage gate insulation film which are thicker than the pad insulation film are formed on the first region and a second region of a semiconductor substrate, respectively. The element isolation film embedded in the semiconductor substrate while penetrating the pad insulating film and the second element isloation film embedded in the semiconductor substrate, while penetrating the initial high-voltage gate insulating film are formed in the first region and the second region, respectively. COPYRIGHT: (C)2004,JPO&NCIPI