| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element having a charge storing insulation film and its manufacturing method. SOLUTION: This element comprises a cell region defined on a semiconductor substrate, and plurality of parallel element isolation films which are formed on the cell region and define an active region. Whole surface of the cell region comprising the active region and the element isolation film is enveloped by the charge storing insulation film 74C. Plurality of parallel gate lines traversing in upper part of the element isolation film on the charge storing insulation film are formed, and a conductive pattern is arranged between considered gate lines. The conductive pattern passes through the charge storing insulation film, and is electrically connected to the active region. According to a manufacturing method of the element, the element isolation film which defines the active region on the semiconductor substrate defined the sell region is formed, the charge storing insulation film is formed on the whole surface of the semiconductor substrate in which the element isolation film is formed. COPYRIGHT: (C)2004,JPO&NCIPI
|
