发明名称 |
SEMICONDUCTOR TREATING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor treating device that can perform a uniform heat treatment on the wafers and is a vertical thermal diffusion furnace preventing metal contamination. SOLUTION: In this substrate treating device, a gas inlet port 6 through which an atmospheric gas is introduced into a core pipe 2 and a wafer boat 13 which holds wafers in the core pipe 2 are separated from each other by forming a porous partition wall 3 between the port 6 and boat 13. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004221457(A) |
申请公布日期 |
2004.08.05 |
申请号 |
JP20030009416 |
申请日期 |
2003.01.17 |
申请人 |
TOSHIBA CORP;TOSHIBA CERAMICS CO LTD |
发明人 |
YANAGISAWA HIROTAKA;KUROKAWA MASAHIKO;ARAKI KOJI |
分类号 |
H01L21/22;H01L21/31;H01L21/322;H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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