发明名称 SEMICONDUCTOR TREATING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor treating device that can perform a uniform heat treatment on the wafers and is a vertical thermal diffusion furnace preventing metal contamination. SOLUTION: In this substrate treating device, a gas inlet port 6 through which an atmospheric gas is introduced into a core pipe 2 and a wafer boat 13 which holds wafers in the core pipe 2 are separated from each other by forming a porous partition wall 3 between the port 6 and boat 13. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004221457(A) 申请公布日期 2004.08.05
申请号 JP20030009416 申请日期 2003.01.17
申请人 TOSHIBA CORP;TOSHIBA CERAMICS CO LTD 发明人 YANAGISAWA HIROTAKA;KUROKAWA MASAHIKO;ARAKI KOJI
分类号 H01L21/22;H01L21/31;H01L21/322;H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/22
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