| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic detection element in which a resistance variationΔR can be increased by increasing the difference in conductivity of conduction electrons between a low resistance state and a high resistance state. SOLUTION: The first magnetic layer 23a in a free magnetic layer 23 having an artificial ferristructure is formed of a magnetic material havingβof a positive value, and the second magnetic layer 23c is formed of a magnetic material havingβof a negative value.βis a value unique to the magnetic material satisfying a following relation;ρ<SB>m</SB>/ρ<SB>M</SB>=(1+β)/(1-β), where -1≤β≤1. Theρ<SB>m</SB>is a specific resistivity for the minority conduction electrons and theρ<SB>M</SB>is a specific resistivity for the majority conduction electrons. COPYRIGHT: (C)2004,JPO&NCIPI
|
