| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-speed SiGe bipolar transistor in which an operation is hardly varied. SOLUTION: The SiGe bipolar transistor has a semiconductor substrate, a first conductivity type collector layer on the substrate, a second conductivity type base layer brought into contact with the collector layer and formed by an epitaxial growth so that germanium is contained in at least a part, and a first conductivity type emitter layer brought into contact with the base layer and formed by the epitaxial growth. The emitter layer contains germanium and carbon. Carbon contained in the emitter layer prevents the diffusion of a dopant, and germanium has action in which the change of a lattice constant by carbon doping is compensated and the emitter layer is lattice-matched with a semiconductor substrate material. COPYRIGHT: (C)2004,JPO&NCIPI
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