| 发明名称 |
LOW-GIDL MOSFET STRUCTURE AND METHOD FOR FABRICATION |
| 摘要 |
A low-GIRL current MOSFET device (90) structure and a method of fabrication thereof which provides a low-GIRL current. The MOSFET device structure contains a central gate conductor (10) whose edges may slightly overlap the source/drain diffusions (88, 88), and left and right side wing gate conductors (70,70) which are separated from the central gate conductor by a thin insulating and diffusion barrier layer (50, 52). |
| 申请公布号 |
WO2004066367(A2) |
申请公布日期 |
2004.08.05 |
| 申请号 |
WO2004US00968 |
申请日期 |
2004.01.15 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RADENS, CARL;DOKUMACI, OMER, H.;DORIS, BRUCE, B.;GLUSCHENKOV, OLEG;MANDELMAN, JACK, A. |
| 分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L29/49;H01L29/78 |
主分类号 |
H01L21/265 |
| 代理机构 |
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