| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve characteristics of a nonvolatile semiconductor memory device. <P>SOLUTION: An electric potential is applied to an ONO film that is composed of a silicon nitride film SIN for accumulating electrical charge, and oxide films BOTOX and TOPOX located above and below it, a memory gate electrode MG in its upper part, a selective gate electrode SG located on its side part via the ONO film, a gate insulating film SGOX located in its lower part, a selective gate electrode SG of a memory cell having a source region MS and a drain region MD, and the source region MS to accelerate electrons flowing through a channel at a high electric field between a selective transistor's channel edge and an n-type impurity region ME edge under the memory gate electrode MG, thus generating a hot hole by impact ionization, and injecting this hot hole into a silicon nitride film SIN using a negative electric potential applied to the memory gate electrode MG for erasion. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
